| PART |
Description |
Maker |
| ESJA02-04S-17 |
20mA 4.0kV 100nS SUBMINIATURE HIGH VOLTAGE DIODES
|
GETAI ELECTRONICS DEVIC...
|
| MK48Z09B100 |
100ns; 1W; 20mA; V(dd): -0.3 to 7.0V; CMOS 8K x 8 zeropower SRAM
|
SGS Thomson Microelectronics
|
| SHV-08EN |
5.0mA 8.0kV 100nS--High Frequency High Voltage Diodes
|
GETAI ELECTRONICS DEVIC...
|
| SB002-15SPA SB002-15CPA |
150V/ 20mA Rectifier
Shottky barrier diode, 150V/20mA rectifier
150V, 20mA Rectifier
Small signal(single type)
|
Sanyo Electric Co.,Ltd.
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| TLSU1002AT02 TLGU1002AT02 TLPGU1002AT02 EA09751 TL |
TOSHIBA LED lamp. Color amber. Peak emission wavelength(typ) @20mA 596 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
TOSHIBA LED lamp. Color yellow. Peak emission wavelength(typ) @20mA 590 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
LED LAMP PANEL CIRCUIT INDICATOR
From old datasheet system
TOSHIBA LED lamp. Color pure-green. Peak emission wavelength(typ) @20mA 562 nm. Luminous intensity @20mA 1.53(min), 6(typ) mcd.
TOSHIBA LED lamp. Color green. Peak emission wavelength(typ) @20mA 574 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
|
TOSHIBA[Toshiba Semiconductor]
Marktech Optoelectronics
|
| BR2 |
2.0kV 2.0A HIGH VOLTAGE DIODES
|
getedz electronics
|
| JB04 |
4.0kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| ESJA58-08A |
8.0kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| JB08 |
8.0kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| ESJA08-08-17 |
5.0mA 8.0kV 80nS-- High Voltage Diodes
|
GETAI ELECTRONICS DEVIC...
|
| 2SC2059KM 2SC2059KN 2SC2059KP 2SC4099P 2SC4099M 2S |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SC-70 晶体管|晶体管|叩| 20V的五（巴西）总裁| 20mA的一（c）|的SC - 70
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-323
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SC-59
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR|BJT|NPN|20VV(BR)CEO|20MAI(C)|SC-59
|
Vishay Intertechnology, Inc.
|
| PIC16F636E/MF PIC16F636E/MFQTP PIC16F636E/P PIC16F |
Triple 4-3-3-Input NOR Gate; Package: SOEIAJ-16; No of Pins: 16; Container: Rail; Qty per Container: 50
DIODE ZENER SINGLE 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-323 3K/REEL
DIODE ZENER SINGLE 150mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-363 3K/REEL
DIODE ZENER SINGLE 350mW 3Vz 20mA-Izt 0.05 50uA-Ir 1 SOT-23 3K/REEL
DIODE ZENER SINGLE 150mW 3Vz 20mA-Izt 0.05 50uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER SINGLE 350mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-23 3K/REEL
RECTIFIER STANDARD SINGLE 1.5A 600V 600 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
Buck Pulse Width Modulator Stepdown Voltage Regulator 16-SOIC 0 to 70
RECTIFIER STANDARD SINGLE 1.5A 800V 800 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
DIODE ZENER DUAL ISOLATED 200mW 7.5Vz 20mA-Izt 0.05 3uA-Ir 6 SOT-363 3K/REEL
DIODE ZENER SINGLE 200mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-323 3K/REEL
DIODE ZENER SINGLE 350mW 7.5Vz 20mA-Izt 0.05 3uA-Ir 6 SOT-23 3K/REEL
8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER TRIPLE ISOLATED 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-363 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER DUAL ISOLATED 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-363 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER SINGLE 200mW 6.2Vz 20mA-Izt 0.05 5uA-Ir 4 SOT-323 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY 8/14-PIN基于闪存8位CMOS微控制器采用纳瓦技
Buck Pulse Width Modulator Stepdown Voltage Regulator 16-PDIP 0 to 70 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
